Shanghai Si Technology Co., Ltd.

A?Solar energy gear polysilion1. Base description :silicon deped is 99.9999%2. Boron doped :<0.20ppba3. P.phospherus doped:0.90ppba 4. Carbon doped:1.00ppba5. Metal doped:<30.00ppbab6. Metal surfce doped:<30.00ppba7. Length :25-250mm8. Type:p-type9. Resistivity:>0.50ohmcmB?Break semiconducter silicom waferDescription1. Base description :break senivonductor silicon wafer2. Shape:arc3. Thickness:>=400um4. Type:P-type5. Resisfivity:>0.50ohmcnC?Minor PolysiliconDescription1. Type:n-type2. Resisfivity:50 ohmcn"3. Carbon iloped:<5*1016/m394. Fluorin doped:<5*1017/m35. Shape:block6. Length:>4mm7. Washing-free is the better with no oxide and infusible substanceF?IC materid1. Washing-free is the better2. N-type resitivity>10ohcm3. P-type resitivity>0.5ohcm4. Shape:block5. Length:>30mm6. Thickness:>0.5mm7. With no infusible subsface and air bubbk [详细介绍]